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| Transys Electronics LIMITED TO-252-2Plastic-Encapsulated Transistors 2SD2118 FEATURES Power dissipation PCM: 1 W (Tamb=25) 3. EMITTER TO-252-2 TRANSISTOR (NPN) 0 9. 70 A. 20 0 0. 75 A. 10 6. 50 A. 15 0 5. 30 A. 10 0 0. 51 A. 05 0 2. 30 A. 10 0 5 a 1. 20 0. 51 A. 10 0 0 0 . 10 5 a 5 a 1. BASE 2. 30 A. 10 0 0. 60 A. 10 0 0 1. 60 A. 15 2. 30 A. 10 0 0. 51 2. COLLECTOR 123 Collector current 5 A ICM: Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=50A, IE=0 Ic=1mA, IB=0 IE=50A, IC=0 VCB=40V, IE=0 VEB=5V, IC=0 VCE=2V, IC=500mA IC=4A, IB=100mA VCE=6V, IC=50mA, f=100MHz VCB=20V, IE=0, f=1MHz 50 20 6 0.5 0.5 120 390 1 150 30 0 2. 70 A. 20 0 a a 9 0. 6 0. 80 A. 10 0 0 5. 50 A. 10 A A V MHz pF fT Cob CLASSIFICATION OF hFE(1) Rank Range Marking Q 120-270 R 180-390 Typical Characteristics 2SD2118 |
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